合金
材料科学
光伏系统
锡
光电子学
结晶学
冶金
电气工程
化学
工程类
作者
Yuqian Zhou,Jian Xu,Jianbo Liu,Baixin Liu
摘要
The concerted action of alloying on both band edges and defect states leads to the most benign defect properties (SnI and GeI) in CsGe0.5Sn0.5I3, compared to the other components.
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