过程(计算)
通过硅通孔
钥匙(锁)
计算机科学
直接结合
阳极连接
硅
材料科学
粘接
胶粘剂
半导体
工艺工程
纳米技术
机械工程
工程类
光电子学
计算机安全
操作系统
图层(电子)
作者
Qin Ren,Woon Leng Loh,Siang Kiat Neo,King-Jien Chui
标识
DOI:10.1109/eptc50525.2020.9315033
摘要
Temporary bonding and de-bonding (TBDB) is one key technology in enabling the 2.5D/3D integration of semiconductor devices [1]. In this paper, we first evaluate two TBDB methods using different TBDB mechanism and corresponding adhesive materials, in particular for via-last Through Silicon Via (TSV) process. We compare a solvent-based TBDB method [2], [3] with another mechanical-based TBDB method. The second part of this paper analyze the process issues and root causes related to each TBDB methodology. Continuous improvement will need to rely on TBDB material and process development as well as integration optimization.
科研通智能强力驱动
Strongly Powered by AbleSci AI