硒化铜铟镓太阳电池
材料科学
空位缺陷
光电子学
光伏系统
带隙
薄膜太阳能电池
太阳能电池
化学计量学
化学工程
纳米技术
结晶学
物理化学
工程类
化学
生物
生态学
作者
Yunhai Zhao,Shengjie Yuan,Qianqian Chang,Zhengji Zhou,Dongxing Kou,Wenhui Zhou,Yafang Qi,Sixin Wu
标识
DOI:10.1002/adfm.202007928
摘要
Abstract Solution processing of Cu(In,Ga)Se 2 (CIGS) absorber makes it cost‐competitive in the photovoltaic market. It is reported that copper‐poor ordered vacancy compound (OVC) is crucial for high performance CIGS solar cells. However, in solution process method, controllable formation of OVC is unavailable and limited research has been carried out. In this work, the controllable formation of the OVC phase on the CIGS surface is successful by controlling the selenization temperature and intentional variation of Cu/(In+Ga) stoichiometry in precursors for top layers and bulk layers deposition. The effects of OVC contents on the device performance are investigated. The CIGS thin film with OVC phase exhibits a lower valence band position. Meanwhile, the CIGS devices with optimized OVC content show decreased interface defects density and better carrier collection ability. The above advantages translate into a champion PCE of 16.39% for CIGS device with OVC phase, which is the champion performance among non‐hydrazine solution‐processed CIGS solar cells. The results demonstrate that the controllable formation of OVC phase approach should make a significant contribution to the efficiency promoting of solution processed CIGS solar cells.
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