Flexible Quasi‐2D Perovskite/IGZO Phototransistors for Ultrasensitive and Broadband Photodetection

Organic-inorganic hybrid perovskites (PVKs) have recently emerged as attractive materials for photodetectors. However, the poor stability and low electrical conductivity still restrict their practical utilization. Owing to the quantum-well feature of two-dimensional (2D) Ruddlesden-Popper PVKs (2D PVKs), a promising quasi-2D PVK/indium gallium zinc oxide (IGZO) heterostructure phototransistor can be designed. By using a simple ligand-exchange spin-coating method, quasi-2D PVK fabricated on flexible substrates exhibits a desirable type-II energy band alignment, which facilitates effective spatial separation of photoexcited carriers. The device exhibits excellent photoresponsivity values of >105 A W-1 at 457 nm, and broadband photoresponse (457-1064 nm). By operating the device in the depletion regime, the specific detectivity is found to be 5.1 × 1016 Jones, which is the record high value among all PVK-based photodetectors reported to date. Due to the resistive hopping barrier in the quasi-2D PVK, the device can also work as an optoelectronic memory for near-infrared information storage. More importantly, the easy manufacturing process is highly beneficial, enabling large-scale and uniform quasi-2D PVK/IGZO hybrid films for detector arrays with outstanding ambient and operation stabilities. All these findings demonstrate the device architecture here provides a rational avenue to the design of next-generation flexible photodetectors with unprecedented sensitivity.