蜂巢
石墨烯
直接和间接带隙
自旋电子学
兴奋剂
异质结
光子晶体
电子结构
光电子学
态密度
密度泛函理论
费米能级
半导体
蜂窝结构
作者
Zhigang Song,Ziwei Li,Hong Wang,Xuedong Bai,Wenlong Wang,Honglin Du,Sunquan Liu,Changsheng Wang,Jingzhi Han,Yingchang Yang,Zheng Liu,Jing Lu,Zheyu Fang,Jinbo Yang
出处
期刊:Nano Letters
[American Chemical Society]
日期:2017-02-22
卷期号:17 (3): 2079-2087
被引量:27
标识
DOI:10.1021/acs.nanolett.7b00271
摘要
Valleytronics is a promising paradigm to explore the emergent degree of freedom for charge carriers on the energy band edges. Using ab initio calculations, we reveal that the honeycomb boron nitride (h-BN) monolayer shows a pair of inequivalent valleys in the vicinities of the vertices of hexagonal Brillouin zone even without the protection of the C3 symmetry. The inequivalent valleys give rise to a 2-fold degree of freedom named the valley pseudospin. The valley pseudospin with a tunable bandgap from deep ultraviolet to far-infrared spectra can be obtained by doping h-BN monolayer with carbon atoms. For a low-concentration carbon periodically doped h-BN monolayer, the subbands with constant valley Hall conductance are predicted due to the interaction between the artificial superlattice and valleys. In addition, the valley pseudospin can be manipulated by visible light for high-concentration carbon doped h-BN monolayer. In agreement with our calculations, the circularly polarized photoluminescence spectra...
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