Thin film perovskite light-emitting diode based on CsPbBr 3 powders and interfacial engineering

The exceptional optical and electronic properties of metal halide perovskite make it the ideal newly coming optoelectronic materials. Compared to the record efficiency acquired in organic-inorganic hybrid perovskite LED, however, thin film CsPbBr3 perovskite LED is rarely reported. The inferior performance of CsPbBr3 thin film perovskite LED can be ascribed to its delocalization nature, weak exciton binding energy, low quantum efficiency and high leakage current. After comprehensive consideration of these factors, in this work, we first put forward a new method for fabrication of highly crystalline CsPbBr3 thin film through powder synthesis, and further control its interfacial properties to obtain continuous and uniform emission layer. The developed CsPbBr3 thin film perovskite LED exhibits greatly improved performance, with luminance as high as 10,700 cd m−2 and current efficiency of 2.9 cd A−1. Therefore, the facile powder method and subsequent interfacial modulation will open up a new and promising avenue for the future thin film perovskite LED development.