生产(经济)
纳米技术
材料科学
光电子学
化学
量子点
计算机科学
产量(工程)
银弹
工艺工程
作者
Sebastian Pingel,Fadi M. Maarouf,Noah Wengenmeyr,Oumaima Mhirsi,Marius Singler,D. Eberlein,Thomas Müller,Benjamin Grübel,Jonas De Rose,Florian Clement,Andreas Lorenz
标识
DOI:10.1109/jphotov.2026.3671871
摘要
Enabling terawatt-scale silicon solar cell manufacturing requires a drastic reduction in silver usage without compromising performance. We demonstrate fine-line screen-printed silicon heterojunction (SHJ) cells using silver (Ag), silver-coated copper (AgCu), and copper (Cu) pastes on industrial precursors, delivering full-cell efficiencies around 23%, comparable to pure-Ag references. Specific Ag consumption drops to 2.1 mg/Wp (AgCu/AgCu) and 1.4 mg/Wp (AgCu/Cu). Fine AgCu grids printed with a nominal 17 μm screen opening on the wafer side achieve high effective Ag utilization of ∼25–30 cm2/Ω·mg. Cells with pure Cu paste metallization on both sides exhibited substantially lower JSC and fill factor (FF). Cells were half-cut and integrated into modules via low-temperature, wire-based soldered interconnection; cutting and module-integration losses were assessed. Under accelerated thermal cycling of modules with cells based on Ag/Ag, AgCu/AgCu, as well as AgCu/Cu metallization, showed ≤2% relative efficiency loss, while Cu/Cu degraded by ∼7%. In module reliability testing, VOC and JSC remained stable, while the degradation was dominated by FF losses due to increased series resistance, partially explained by occasional wire detachment. These results show that SHJ cells with AgCu/AgCu or AgCu/Cu metallization can meet Terawatt (TW)-era Ag constraints and deliver SHJ modules with substantially lower Ag consumption compared to typical tunnel oxide passivated contact (TOPCon) cells and modules, which require ∼7 mg/Wp.
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