Optimization of Slurry Preparation and Sintering Atmosphere for High-Density, Plasma-Resistant Alumina Ceramics

Alumina ceramics used in semiconductor plasma environments require high densification, microstructural homogeneity, and stable performance under increasingly aggressive processing conditions. However, systematic studies linking slurry processing parameters to the plasma resistance of alumina ceramics remain limited. In this study, the effects of slurry preparation parameters—specifically milling and aging—and sintering atmosphere on the densification, mechanical strength, and plasma etching resistance of slip-cast alumina ceramics were systematically investigated. Optimal dispersion stability was achieved under 12 h milling and 12–24 h aging conditions, resulting in homogenized green body packing and a high relative sintered density exceeding 99%. Mechanical strength and plasma resistance were strongly influenced by slurry aging and sintering atmosphere. Specimens aged for 48 h and sintered under a low oxygen partial pressure (N2 at 1.0 L/min) exhibited the highest flexural strength and significantly improved resistance to SF6/Ar plasma etching, with reduced etch depth and suppressed surface roughening. These results demonstrate that coordinated slurry processing and sintering atmosphere control is an effective strategy for designing high-reliability, plasma-resistant alumina ceramics for high-demand semiconductor manufacturing environments.