放大器
低噪声放大器
宽带
CMOS芯片
阻抗匹配
噪声系数
电气工程
极高频率
材料科学
共面波导
W波段
单片微波集成电路
光电子学
电子工程
电阻抗
物理
微波食品加热
工程类
光学
电信
作者
Dristy Parveg,Mikko Varonen,Denizhan Karaca,Ali Vahdati,Mikko Kantanen,K. Halonen
标识
DOI:10.1109/tmtt.2017.2777976
摘要
This paper validates a design and modeling methodology of coupled slow-wave waveguides (CS-CPW) by presenting a D-band CMOS low-noise amplifier (LNA) that utilizes the CS-CPW for impedance matching. The robustness and feasibility of using the CS-CPW as a matching element in wideband millimeter-wave (mm-wave) silicon circuit designs are studied. Furthermore, the key design details of a mm-wave LNA are discussed. The designed monolithic microwave integrated circuit amplifier has a gain greater than 10 dB from 135 to 170 GHz with a peak gain of 15.7 dB at 160 GHz. The amplifier has a measured noise figure of 8.5 dB from 135 to 170 GHz, and an output-referred 1-dB compression point of -16.5 dBm at 160 GHz. The total power consumption of the amplifier is 32 mW.
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