Advanced combined overlay and CD uniformity measurement mark for double patterning

Advanced processing methods like multiple patterning necessitate improved intra-layer uniformity and balancing monitoring for overlay and CD. To achieve those requirements without major throughout impact, a new advanced mark for measurement is introduced. Based on an optical measurement, this mark delivers CD and overlay results for a specified layer at once. During the conducted experiments at front-end-of-line (FEOL) process area, a mark selection is done and the measurement capability of this mark design is verified. Gathered results are used to determine lithography to etch biases and intra-wafer signatures for CD and overlay. Furthermore, possible use cases like dose correction recipe creation and process signature monitoring were discussed.