Comparative Analysis of SiC MOSFET and Si MOSFET Power Losses in Switching Power Supply

SiC MOSFET is the latest high-voltage power device and are characterized by low on-resistance and extremely fast switching speed. The effects of the power MOSFET on power losses of switching power supply were analyzed, the comparison test of SiC MOSFET and silicon MOSFET with same parameter of 1 200 V/24 A was made. The experimental results show that the switching speed of SiC MOSFET is significantly faster than that of silicon MOSFET under the same condition of driver and load,,meanwhile, the power losses are significantly lowerd, the efficiency of switching power supply could be substantially improved and even simply replace SiC MOSFET with silicon MOSFET.