材料科学
紫外线
太阳能电池
降级(电信)
开路电压
硅
光电子学
基质(水族馆)
短路
图层(电子)
电容
能量转换效率
涂层
电压
纳米技术
电极
化学
电气工程
物理化学
工程类
地质学
海洋学
作者
Hyojung Kim,Pyungho Choi,Kwangsoo Kim,Hyungsuk Kuh,Dohyun Beak,Jaehyung Lee,Junsin Yi,Byoungdeog Choi
标识
DOI:10.1166/jnn.2014.7887
摘要
Current-Voltage (I-V) and Capacitance-Voltage (C-V) characteristics of crystalline silicon solar cells were obtained under UV exposure. The solar cell parameters degraded with increasing exposure time. For example, open-circuit voltage (V(oc)), short-circuit current (J(sc)), fill-factor (FF) and efficiency (eta) were degraded. In this study, solar cell did not degrade at the p-n junction or silicon substrate effective lifetime by UltraViolet (UV) light exposure. The main degradation occurred at the SiN(x) layer, the commonly used anti-reflection coating (ARC), due to the positive charges generated by the high-energy UV light source. UV light changed the characteristics of the SiN(x) layer and the Si/SiN(x) interface to degrade the cell efficiency.
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