Fast growth of nanocrystalline silicon film prepared with low hydrogen flow rate by using PECVD at low-temperature

Plasma-enhanced chemical vapor deposition(PECVD) was used to prepare nanocrystalline silicon films.The effects of hydrogen flow rate on the growth behavior of nanocrystalline silicon films were investigated at a low temperature of 300℃.The results reveal that the effect of hydrogen on the growth behavior of the films deposited using SiCl4+H2 are completely different from that of using SiH4+H2.It is found that the crystalline fraction increases with decreasing the hydrogen flow rate and reaches a maximum value at a low hydrogen flow rate.The effect of hydrogen on the deposition rate of the film also exhibits a similar tendency to that of crystalline fraction.By controlling the deposition conditions,the films with high crystalline fraction of 76% as well as high deposition rate of 0.35nm/s were obtained at low hydrogen flow rate.