纳米线
非阻塞I/O
纳米尺度
化学
氧化物
纳米技术
电阻随机存取存储器
电阻式触摸屏
金属
光电子学
电极
材料科学
电气工程
催化作用
有机化学
物理化学
工程类
生物化学
作者
Kouki Oka,Takeshi Yanagida,Kazuki Nagashima,Tomoji Kawai,Jin‐Soo Kim,Bae Ho Park
摘要
We have demonstrated the construction of highly stable resistive switching (RS) junctions with a metal/NiO nanowire/metal structure and used them to elucidate the crucial role of redox events in the nanoscale bipolar RS. The presented approaches utilizing oxide nanowire/metal junctions offer an important system and platform for investigating nanoscale RS mechanisms of various oxide materials.
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