Wide-Band-Gap Semiconductors for Biointegrated Electronics: Recent Advances and Future Directions

半导体 数码产品 宽禁带半导体 背景(考古学) 碳化硅 带隙 生物电子学 氮化镓 纳米技术 材料科学 光电子学 工程类 生物传感器 电气工程 古生物学 图层(电子) 冶金 生物
作者
Nhat‐Khuong Nguyen,Thanh Nguyen,Tuan‐Khoa Nguyen,Sharda Yadav,Toan Dinh,Mostafa Kamal Masud,Pradip Singha,Thanh Nho,Matthew Barton,Hang T. Ta,Navid Kashaninejad,Chin Hong Ooi,Nam‐Trung Nguyen,Hoang‐Phuong Phan
出处
期刊:ACS applied electronic materials [American Chemical Society]
卷期号:3 (5): 1959-1981 被引量:39
标识
DOI:10.1021/acsaelm.0c01122
摘要

Wearable and implantable bioelectronics have experienced remarkable progress over the last decades. Bioelectronic devices provide seamless integration between electronics and biological tissue, offering unique functions for healthcare applications such as real-time and online monitoring and stimulation. Organic semiconductors and silicon-based flexible electronics have been dominantly used as materials for wearable and implantable devices. However, inherent drawbacks such as low electronic mobility, particularly in organic materials, instability, and narrow band gaps mainly limit their full potential for optogenetics and implantable applications. In this context, wide-band-gap (WBG) materials with excellent electrical and mechanical properties have emerged as promising candidates for flexible electronics. With a significant piezoelectric effect, direct band gap and optical transparency, and chemical inertness, these materials are expected to have practical applications in many sectors such as energy harvesting, optoelectronics, or electronic devices, where lasting and stable operation is highly desired. Recent advances in micro/nanomachining processes and synthesis methods for WBG materials led to their possible use in soft electronics. Considering the importance of WBG materials in this fast-growing field, the present paper provides a comprehensive Review on the most common WBG materials, including zinc oxide (ZnO) for II–VI compounds, gallium nitride (GaN) for III–V compounds, and silicon carbide (SiC) for IV–IV compounds. We first discuss the fundamental physical and chemical characteristics of these materials and their advantages for biosensing applications. We then summarize the fabrication techniques of wide-band-gap semiconductors, including how these materials can be transferred from rigid to stretchable and flexible substrates. Next, we provide a snapshot of the recent development of flexible WBG materials-based wearable and implantable devices. Finally, we conclude with perspectives on future research direction.

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