Ultrafast response of cubic silicon carbide to intense attosecond pulse light

In this paper we are motivated to numerically investigate the fundamental strong-field and attosecond response processes in wide band-gap solids, using the first-principle approach based on time-dependent density functional theory, advancing our understanding of fundamental strong-field and attosecond physics in solids. Taking cubic silicon carbide as a concrete example, the influence of pulse parameters on the ultrafast responses is demonstrated, which allows one to gain a useful independent insight into the interaction processes of attosecond light pulses with solids, revealing information currently not accessible by experiment. We also demonstrate control of the charge transfer and dielectric permittivity by intense attosecond pulse light. It is concluded that a single-cycle attosecond pulse light can be used to effectively manipulate the charge transfer and dielectric properties of wide-band gap materials with great potential for ultrafast device applications.