工作职能
钻石
带材弯曲
电子亲和性(数据页)
费米能级
材料科学
兴奋剂
电子
电子转移
工作(物理)
弯曲
电子传输链
原子物理学
化学
凝聚态物理
化学物理
纳米技术
光电子学
复合材料
物理
物理化学
热力学
图层(电子)
生物化学
分子
量子力学
有机化学
作者
Mark T. Edmonds,C. I. Pakes,S. Mammadov,Wenjun Zhang,Anton Tadich,J. Ristein,L. Ley
标识
DOI:10.1002/pssa.201100010
摘要
Abstract The change in electron affinity and band bending as a result of atmosphere and fullerene (C 60 F 48 ) induced surface conductivity on H‐terminated (100) diamond is determined by simultaneously measuring the work function ( ϕ ) and C1s core level shift for both intrinsic and boron doped diamond. Changes in work function as a result of surface transfer doping are shown to not only reflect variations in the position of the surface Fermi level as reported by earlier investigations but also changes in the electron affinity, with the latter accounting for up to 0.63 eV of the highest observed change in ϕ of 1.45 eV.
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