材料科学
三氧化钼
二硒醚
平面的
半导体
三氧化钨
钼
三氧化物
纳米技术
冶金
光电子学
计算机科学
钨
计算机图形学(图像)
硫黄
硒
作者
Sivacarendran Balendhran,Sumeet Walia,Hussein Nili,Jian Zhen Ou,Serge Zhuiykov,Richard B. Kaner,Sharath Sriram,Madhu Bhaskaran,Kourosh Kalantar‐zadeh
标识
DOI:10.1002/adfm.201300125
摘要
Abstract In the quest to discover the properties of planar semiconductors, two‐dimensional molybdenum trioxide and dichalcogenides have recently attracted a large amount of interest. This family, which includes molybdenum trioxide (MoO 3 ), disulphide (MoS 2 ), diselenide (MoSe 2 ) and ditelluride (MoTe 2 ), possesses many unique properties that make its compounds appealing for a wide range of applications. These properties can be thickness dependent and may be manipulated via a large number of physical and chemical processes. In this Feature Article, a comprehensive review is delivered of the fundamental properties, synthesis techniques and applications of layered and planar MoO 3 , MoS 2 , MoSe 2 , and MoTe 2 along with their future prospects.
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