材料科学
MOSFET
随时间变化的栅氧化层击穿
栅氧化层
光电子学
电子迁移率
氧化物
退火(玻璃)
电气工程
冶金
晶体管
工程类
电压
作者
Keiko Fujihira,Yoichiro Tarui,K. Ohtsuka,Mitsuru Imaizumi,Tetsuya Takami
出处
期刊:Materials Science Forum
日期:2005-05-01
卷期号:483-485: 697-700
被引量:4
标识
DOI:10.4028/www.scientific.net/msf.483-485.697
摘要
The effect of N2O anneal on channel mobility of inversion-type 4H-SiC n-channel MOSFET has been systematically investigated. It is found that the mobility increases with increasing anneal temperature from 900 to 1150°C. The highest field effect mobility of 30 cm2/Vs is achieved by 1150°C anneal for 3 h, which is about 20 times higher than that for non-annealed MOSFET. In order to investigate the oxide reliability, TDDB measurement has been performed on SiO2 grown on n-type 4H-SiC. The oxide lifetime is found to be drastically improved by N2O anneal.
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