Blue InGaN Light-Emitting Diodes With Multiple GaN-InGaN Barriers

Optical performance of blue InGaN light-emitting diodes (LEDs) with multiple GaN-InGaN barriers is investigated. The energy band diagrams, light-current performance curves, and internal quantum efficiency are studied numerically. The simulation results show that the InGaN LED has markedly improved the optical performance when the first conventional GaN barrier is replaced by the GaN-InGaN-GaN barrier, in which the indium composition is less than 5%, with other GaN barriers remain unchanged. The improved performance is due to the enhanced injection efficiency of holes and relatively uniform distribution of electrons and holes.