A scalable EE_HEMT based large signal model for multi‐finger AlGaN/GaN HEMTs for linear and non‐linear circuit design

Abstract A scalable non‐linear large signal model based on the ADS EE_HEMT model was developed for AlGaN/GaN HEMTs for use in linear and non‐linear circuit design. Excellent agreement between simulations and measurements was obtained for the DC, small signal and large signal power and efficiency performance including load‐pull and source‐pull contours. Excellent scalability of the model was also demonstrated (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)