纳米线
硅
材料科学
硅纳米线
再分配(选举)
拉伤
电子
凝聚态物理
应变硅
纳米技术
光电子学
物理
晶体硅
量子力学
医学
非晶硅
政治
政治学
内科学
法学
作者
Christian Tuma,A. Curioni
摘要
A multiscale method is proposed to analyze the internal redistribution of tensile strain applied to silicon ⟨100⟩ nanowires and its effect on electron effective masses m∗. Nonperiodic, realistic models of unprecedented size containing up to 2.2×107 atoms (652×26×26 nm3) allow the identification of nonuniform redistribution patterns specific to the constraints applied to impose external strain. Depending on how the external strain is imposed, silicon nanowires can show m∗ behavior similar to strained bulk silicon, or, as a function of nanowire size, can display intrinsic strain large enough that external strain hardly reduces m∗ further. For nanowire cross section sizes smaller than 8×8 nm2 quantum confinement leads to an increase in m∗ which cannot be compensated for by tensile strain.
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