Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN-Based Light-Emitting Diode

This study investigates an aluminum nitride (AlN) nanorod structure sputtered by glancing angle deposition (GLAD) and its application as a buffer layer for GaN‐based light‐emitting diodes (LEDs) that are fabricated on sapphire substrates. The ray tracing method is adopted with a three‐dimensional model in TracePro software. Simulation results indicate that the zigzag AlN nanorod structure is an optimal buffer layer in a GaN‐based LED. Furthermore, the light output power of a GaN‐based LED with a zigzag AlN nanorod structure improves to as much as 28.6% at a forward current of 20 mA over that of the GaN‐based LED with a normal AlN buffer layer.