薄脆饼
共发射极
饱和电流
硅
载流子寿命
材料科学
半导体
光电子学
俄歇效应
螺旋钻
饱和(图论)
太阳能电池
工程物理
原子物理学
物理
电压
组合数学
量子力学
数学
作者
Andrés Cuevas,Daniel Macdonald
出处
期刊:Solar Energy
[Elsevier]
日期:2004-01-01
卷期号:76 (1-3): 255-262
被引量:263
标识
DOI:10.1016/j.solener.2003.07.033
摘要
The carrier lifetime is the most important electronic property of semiconductor materials for solar cells. In this paper we discuss traditional and novel methods for its experimental determination. Among the latter, the Quasi-steady-state photoconductance is particularly powerful since it permits measuring the injection level dependence of the lifetime. The analysis and interpretation of this dependence yields a wealth of information on the physical mechanisms that limit the performance of silicon solar cells. The effect of the surfaces of the silicon wafers, the emitter saturation current density and the Shockley–Read–Hall and Auger recombination mechanisms are explained and their possible determination from lifetime measurements discussed.
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