Gas phase kinetics analysis and implications for silicon carbide chemical vapor deposition

The purpose of this study was to evaluate the impact of gas phase chemistry on recently reported two step chemical vapor deposition processes for epitaxial β-SiC. Results are reported for equilibrium predictions of species concentrations near the substrate surface and kinetic calculations to determine if these equilibrium levels are obtained. These calculations indicate significant differences in the levels of hydrocarbon species as well as species containing silicon-carbon bonds for equilibrium versus kinetically limited situations. This result combined with available data on the surface chemistry of the affected species provides considerable insight into the deposition mechanism.