极化
锆钛酸铅
薄膜
压电
材料科学
相界
压电系数
铁电性
化学气相沉积
溶胶凝胶
复合材料
分析化学(期刊)
相(物质)
矿物学
光电子学
纳米技术
化学
电介质
有机化学
作者
K. Lefki,G. J. M. Dormans
摘要
This article presents measurements of piezoelectric coefficients of lead zirconate titanate (PZT) thin films. The normal load method is used to measure the coefficients for PZT films with various compositions prepared by the sol-gel technique or by organometallic chemical vapor deposition (OMCVD). The as-deposited OMCVD films have a piezoelectric coefficient of 20–40×10−12 m/V, whereas the unpoled sol-gel films are not piezoelectric. After poling the thin films having a composition near the morphotropic phase boundary; these values increase to 200×10−12 m/V for OMCVD films and 400×10−12 m/V for sol-gel films. The difference may arise from an incomplete poling of the OMCVD films.
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