材料科学
硅
散射
光学
相干后向散射
光电子学
物理
出处
期刊:
日期:2013-01-01
卷期号:: TC.6-TC.6
标识
DOI:10.1364/oic.2013.tc.6
摘要
HfO2/SiO2 multilayers were deposited on commercial silicon substrates. Angular resolved scatter measurement was performed at 1064 nm. Total backscattering and near angle scattering (0.5° to 2°) were determined to be 10−4 and 10−5, respectively.
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