静电放电
CMOS芯片
电子线路
电气工程
整流器(神经网络)
晶闸管
炸薯条
集成电路
电压
限制
电子工程
工程类
瞬态(计算机编程)
计算机科学
机械工程
随机神经网络
机器学习
循环神经网络
人工神经网络
操作系统
作者
Ming-Dou Ker,Kai‐Cheng Hsu
标识
DOI:10.1109/tdmr.2005.846824
摘要
An overview on the electrostatic discharge (ESD) protection circuits by using the silicon controlled rectifier (SCR)-based devices in CMOS ICs is presented. The history and evolution of SCR device used for on-chip ESD protection is introduced. Moreover, two practical problems (higher switching voltage and transient-induced latchup issue) limiting the use of SCR-based devices in on-chip ESD protection are reported. Some modified device structures and trigger-assist circuit techniques to reduce the switching voltage of SCR-based devices are discussed. The solutions to overcome latchup issue in the SCR-based devices are also discussed to safely apply the SCR-based devices for on-chip ESD protection in CMOS IC products.
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