Electrical properties of solution processed p-SnS nanosheets/n-TiO2 heterojunction assembly

A heterojunction device was fabricated with solution processed SnS nanosheets (p-type)/TiO2 nanoparticles (n-type) and a top Pt thin layer to form Pt/SnS/TiO2/fluorine doped tin oxide diode assembly. The SnS nanosheets were synthesized by facile hydrothermal process at low-temperature and the detailed morphological characterizations revealed that the SnS nanosheets are uniformly grown in high density. The structural characterizations confirmed the well-crystallinity and purity of the synthesized SnS nanosheets. The fabricated heterostructure device presented considerably improved electrical properties with high current of 0.78 mA at 1 V, reasonable ideality factor of 31 and relatively high effective barrier height of 0.634 eV.