甲脒
锡
三碘化物
钝化
钙钛矿(结构)
材料科学
光电子学
卤化物
氢
半导体
空位缺陷
化学物理
纳米技术
无机化学
化学
结晶学
物理化学
冶金
电解质
有机化学
电极
图层(电子)
色素敏化染料
作者
Yuhang Liang,Xiangyuan Cui,Feng Li,Catherine Stampfl,Simon P. Ringer,Jun Huang,Rongkun Zheng
标识
DOI:10.1103/physrevapplied.18.034084
摘要
Tin halide perovskites present outstanding optoelectronic properties and great application potential, without the toxicity of lead. Here a systematic first-principles investigation reveals that a high-density defect complex, consisting of a tin vacancy plus a hydrogen molecule (${V}_{\mathrm{Sn}}$--H${}_{2}$), is a highly effective center for nonradiative recombination of electrons and holes in this semiconductor. That would explain the experimentally observed significant nonradiative loss in devices based on formamidinium tin triiodide. Therefore, the passivation of this defect complex is expected to improve the performance of tin-based perovskite solar cells and other optoelectronic devices.
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