Results from single event effect tests with MIMOSIS-1

Abstract Being installed as close as 5.5 mm to the beam axis, the Micro Vertex Detector ( mvd ) of the cbm experiment will be exposed to a sizable flow of heavy beam ions and nuclear fragments. The cmos Monolithic Active Pixel Sensor for the mvd, mimosis , must resist the related heavy ion impacts without permanent damage or frequent interrupt of operation as caused by single event effects ( see ). We motivate the requirements on the sensor and introduce our concept for protecting the device against see s. Moreover, we report the results of a related test campaign carried out with the first full size sensor prototype, mimosis -1, and different heavy ion beams at gsi .