铝
半导体
材料科学
腐蚀
冶金
过程(计算)
光电子学
计算机科学
操作系统
作者
Yongxiang Liu,Ji Chen,Tengfei Yin
标识
DOI:10.1002/maco.202514881
摘要
ABSTRACT This study investigates the corrosion resistance of 3003 aluminum alloys from different sources used in the semiconductor industry, exploring their behavior in both liquid and gas environments. The corrosion mechanisms were analyzed through microscopic characterization and calculations. The results reveal significant variations in the distribution of particles, with notable differences in the number and area of Al 6 (Mn,Fe) phase. The slightly higher electrochemical potential of the Al 6 (Mn,Fe) phase compared to the matrix was identified as a key factor accelerating corrosion in liquid environments. Additionally, the lower saturation vapor pressure of silicon chloride led to the accumulation of minimal corrosion products on the surface of α‐Al 12 (Mn,Fe) 3 Si phase.
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