In Situ Dual‐Ionic Charge Compensation for Cs x FA 1‐x PbI 3 Perovskite Quantum Dot Solar Cells with Over 18% Efficiency

材料科学 甲脒 量子点 离子键合 三碘化物 半导体 光伏系统 光电子学 钙钛矿(结构) 纳米技术 离子 物理化学 结晶学 电极 电解质 化学 色素敏化染料 生物 有机化学 生态学
作者
Guoliang Wang,Baoxing Ren,Xinyi Mei,Mingxu Zhang,Junming Qiu,Zhimei Sun,Xiaoliang Zhang
出处
期刊:Advanced Materials [Wiley]
卷期号:37 (35): e2508425-e2508425 被引量:3
标识
DOI:10.1002/adma.202508425
摘要

Cesium-formamidinium lead triiodide perovskite quantum dots (CsxFA1-xPbI3 PQDs) receive increasing attention for new-generation solar cells due to their outstanding optoelectronic properties and solution processibility. However, during the synthesis of CsxFA1-xPbI3 PQDs, PQDs seriously suffer from the ligand detachment from the PQD surface under the polar antisolvent, leaving numerous surface vacancies that significantly compromise the surface lattice integrity and optoelectronic properties of PQDs. A facile dual-ionic charge compensation strategy is introduced through the bimolecular nucleophilic substitution (SN2) to reinforce the surface lattice of CsxFA1-xPbI3 PQDs. The dual-ionic ligands produced during the SN2 reaction could in situ fill the surface vacancies of PQDs in the nonpolar solvent, which significantly improves the surface lattice integrity and thus the optoelectronic properties of PQDs, substantially diminishing trap-assisted nonradiative recombination. Consequently, the PQDs solar cells show a power conversion efficiency of up to 18.17%, representing the highest efficiency in CsxFA1-xPbI3 PQD solar cells. The remarkable photovoltaic performance is attributed to the reinforced surface lattice of PQDs, suppressing the energy losses induced by the nonradiative recombination. This study provides crucial design principles for optimizing the crystalline structure integrity of PQDs, which also paves a new avenue for developing high-performance solar cells or other optoelectronic devices.
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