石墨烯
磁性
Atom(片上系统)
兴奋剂
凝聚态物理
轨道杂交
带隙
材料科学
原子轨道
纳米技术
化学
物理
电子
量子力学
分子轨道理论
计算机科学
嵌入式系统
作者
Jianfei Xiang,Huimin Hu,Jin‐Ho Choi
摘要
In this study, we employ first-principles density functional theory calculations to investigate the impact of single-atom doping on the electronic band structure of graphene. Our results demonstrate that specific dopants induce a local transition in graphene's hybridization from sp2 to sp3, which plays a crucial role in the opening of the band gap and the emergence of magnetism. We also found that electron-donating dopants cause significant electron localization near the Fermi level, resulting in the formation of nearly flat band states. Furthermore, when a dopant contributes an extra electron to the graphene lattice, the localized flat-band electrons drive band splitting, induce spin polarization, and generate a net spin magnetic moment in the system. These findings offer fundamental insights into how single-atom doping modifies graphene's electronic and magnetic properties, highlighting its potential for spintronic applications and tunable electronic devices.
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