Simultaneous 3d characterization and repair of EUV mask defects

As semiconductor processes have been developed into nanometer-level processes, the transition from photo- to EUV-processes has accelerated for nano-pattern production. In line with this trend, the need for analytical techniques of sub-nanometer defects in 3D shapes and chemical components is significantly increasing. Correcting various types of defects in the EUV process becomes essential. We have developed defect characterization and defect-repairing techniques using nano-machining and AFM technology for the EUV and optical photomasks. The defects identified in the mask are primarily divided into a soft defect, which occurs during the process and sits randomly in the mask, and a hard defect, which mainly indicates a damaged or altered pattern. Based on the inline AFM system introduced as semiconductor inspection equipment, I would like to introduce the potential technologies to analyze the 3D shape and mechanical and chemical properties of defects occurring at the EUV or photomasks.