Prediction of fracture evolution in the TiN/Al thin films based on a full-field modelling approach

材料科学 断裂(地质) 薄膜 纳米压痕 氮化钛 应力场 压力(语言学) 基质(水族馆) 脉冲激光沉积 复合材料 有限元法 图层(电子) 氮化物 冶金 纳米技术 结构工程 工程类 语言学 哲学 海洋学 地质学
作者
Konrad Perzyński,Grzegorz Cios,Łukasz Madej
出处
期刊:International Journal of Solids and Structures [Elsevier BV]
卷期号:283: 112473-112473
标识
DOI:10.1016/j.ijsolstr.2023.112473
摘要

The classical approach to fracture simulation in a thin film for bioengineering applications neglects the underlying complex morphology of the deposited layer, leading to inaccurate numerical predictions. That may carry high risks during product development and its further exploitation, especially in biomedical applications. Therefore, here, we demonstrate the new approach to numerical investigation of the fracture evolution in pulsed laser-deposited (PLD) titanium nitride (TiN) thin films under loading conditions based on the full-field model of layer columnar morphology. We use the TiN film deposited on the aluminium (Al) substrate as a case study. Based on the nanoindentation test, we first determine the flow stress characteristics of the Al substrate and TiN/Al structure. An inverse analysis technique allowed us to precisely recalculate measured load–displacement values into the required stress–strain curve. Then, we developed a full-field model based on the digital material representation (DMR) concept for further investigation. The DMR was generated to replicate major morphological features of the deposited thin film identified under transmission electron microscop (TEM). Finally, we incorporated the TiN/Al full-field model into the finite element analysis with a cohesive zone approach for local analysis of fracture behaviour. Inverse analysis based on the developed direct model and experimental measurements allowed us to identify the parameters of the fracture model. As a result, we proved that the full-field model based on the digital material representation concept could be used for reliable predictions of local fracture development along the morphological features of the deposited thin film.

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