Review of SiC MOSFET Failure Analysis Under Extreme Conditions: High Temperature, High Frequency and Irradiation

With the inherent advantages of material, SiC MOSFET is promising in many applications. There is much research on failure analysis of SiC MOSFET under extreme conditions. A comprehensive review is critical to provide reference for weak locations of chip in device design or application stage. Under three types of extreme conditions of high temperature, high frequency and irradiation, the failure mechanism and mode, characterization, withstand capability and factors affecting reliability are reviewed in detail. The analysis of failure mechanism can provide a basis for chip designers to improve chip performance for specific operating conditions, and provide device users with advice on circuit design. A clear safe working area allows practitioners to maximize the performance of the device. The methods to improve reliability of SiC MOSFET are proposed at the end of the paper.