From Salt to Electronics: Heteroepitaxy and GaAs Solar Cells

Abstract This paper presents work on the heteroepitaxy of salts, specifically fluorides, on semiconductors and heteroepitaxy of semiconductors on salts. Fluorides layers are deposited on commercial Gallium Arsenide (GaAs) wafers followed by the heteroepitaxial growth of GaAs using metal‐organic chemical vapor deposition (MOCVD). The fluoride layers consist of 2 lattice‐engineered layers of alkaline‐earth compounds to match with GaAs, and are used to sandwich another alkaline‐earth compound with higher water‐solubility as a sacrificial layer. The triple fluoride layers enable liftoff of free‐standing semiconductor films which can be further transferred to desirable substrates. 2D‐X‐ray Diffraction (2D‐XRD) measurements confirm epitaxial growth of both the fluorides and the subsequently grown GaAs films. Single junction (SJ) solar cell devices based on thus prepared films show a power conversion efficiency (PCE) of 10.3% under 1 sun illumination. After the completion of device fabrications, the GaAs film is lifted off from the substrate by a novel water‐assisted epitaxial liftoff (H 2 O‐ELO) technique and transferred to a cheaper substrate. The original GaAs wafer is recycled and reused twice. Devices based on reused substrates show no significant degradation in performance. The semiconductor‐salt‐semiconductor scheme has great implications in high‐performance, flexible, and large‐area electronics.