异质结
激子
材料科学
光电子学
凝聚态物理
偶极子
钙钛矿(结构)
动量(技术分析)
超晶格
单层
范德瓦尔斯力
纳米技术
物理
化学
量子力学
财务
分子
结晶学
经济
作者
Wendian Yao,Dong Yang,Yingying Chen,Junchao Hu,Junze Li,Dehui Li
出处
期刊:Nano Letters
[American Chemical Society]
日期:2022-08-29
卷期号:22 (17): 7230-7237
被引量:30
标识
DOI:10.1021/acs.nanolett.2c02742
摘要
Interlayer excitons (IXs) in type II van der Waals (vdW) heterostructures are equipped with an oriented permanent dipole moment and long lifetime and thus would allow promising applications in excitonic and optoelectronic devices. However, based on the widely studied heterostructures of transition-metal dichalcogenides (TMDs), IX emission is greatly influenced by the lattice mismatch and geometric misalignment between the constituent layers, increasing the complexity of the device fabrication. Here, we report on the robust momentum-indirect IX emission in TMD/two-dimensional (2D) perovskite vdW heterostructures, which were fabricated without considering the orientation arrangement or momentum mismatch. The IXs show a large diffusion coefficient of ∼10 cm2 s-1, and importantly the IX emission energy can be widely tuned from 1.3 to 1.6 eV via changing the layer number of the 2D perovskite or the thickness of TMD flakes, shedding light on the applications of vdW interface engineering to broad-spectrum optoelectronics.
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