脉冲宽度调制
降压式变换器
材料科学
氮化镓
电压
门驱动器
正激变换器
电气工程
Ćuk转换器
光电子学
升压变换器
工程类
图层(电子)
复合材料
作者
Sijian Wu,Ziang Ran,Zhiguo Tong,Tianqi Liu,Yan Lü
标识
DOI:10.1109/icta60488.2023.10364290
摘要
In this paper, a fully-integrated gallium-nitride (GaN) half-bridge DC-DC buck converter is designed based on GaN-on-SOI (silicon-on-insulator) technology. A self-bootstrap gate drive circuit is designed to achieve rail-to-rail gate driving while reducing the conduction loss of the switch. A level shifter is designed to transfer the gate drive control voltage from the low voltage (LV) region to the high voltage (HV) region. In addition, we design a fully-integrated closed-loop pulse-width modulation (PWM) control module for the buck converter. We have simulated the direct 48V-to-1V DC-DC with a maximum load current of 5A. At 250kHz, the half bridge DC-DC buck converter can achieve a peak efficiency of 84.3% at a load current of 3A.
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