Over 6 μm thick MOCVD-grown low-background carrier density (1015 cm−3) high-mobility (010) β-Ga2O3 drift layers

This work reports high carrier mobilities and growth rates simultaneously in low unintentionally doped (UID) (1015 cm−3) metalorganic chemical vapor deposition (MOCVD)-grown thick β-Ga2O3 epitaxial drift layers, with thicknesses reaching up to 6.3 μm, using triethylgallium (TEGa) as a precursor. Record-high room temperature Hall mobilities of 187–190 cm2/V s were measured for background carrier density values of 2.4–3.5 × 1015 cm−3 grown at a rate of 2.2 μm/h. A controlled background carrier density scaling from 3.3 × 1016 to 2.4 × 1015 cm−3 is demonstrated, without the use of intentional dopant gases such as silane, by controlling the growth rate and O2/TEGa ratio. Films show smooth surface morphologies of 0.8–3.8 nm RMS roughness for film thicknesses of 1.24–6.3 μm. Vertical Ni Schottky barrier diodes (SBDs) fabricated on UID MOCVD material were compared with those fabricated on hydride vapor phase epitaxy material, revealing superior material and device characteristics. MOCVD SBDs on a 6.3 μm thick epitaxial layer show a uniform charge vs depth profile of ∼ 2.4 × 1015 cm−3, an estimated μdrift of 132 cm2/V s, breakdown voltage (VBR) close to 1.2 kV, and a surface parallel plane field of 2.05 MV/cm without any electric field management—setting record-high parameters for any MOCVD-grown β-Ga2O3 vertical diode to date.