驱动电路
计算机科学
电气工程
门驱动器
工程类
电压
作者
Zhenghao Huang,Longbao Lv,Lei Shen,Ping Cao,Lu Zhang,Ying Shen,Xiujian Zhu
摘要
This paper presents a multi‐output gate driver circuit that utilizes CMOS technology, combining n‐type oxide and p‐type low‐temperature polycrystalline silicon (LTPS). The proposed circuit is designed to generate control signals for both T2 and T3/T4 in the 8T1C LTPO compensation circuit using a single gate driver. By employing CMOS technology, the circuit enhances operational reliability and reduces power consumption. The integration of two separate gate drivers into one unit not only minimizes the area required for the gate driver but also lowers power consumption, as confirmed by simulations. As a result, the application of this gate driver circuit enables a reduction in the OLED display bezel size while achieving lower power consumption.
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