Structural Properties of Indium Tin Oxide (ITO) Deposited Thin Film Using Electron Beam Evaporation

In this work, Indium Tin Oxide (ITO) thin films were deposited using electron beam evaporation on white glass substrates with different thin film thicknesses (50, 100 and 170 nm). The structural properties of the deposited samples were obtained using by X-ray Diffraction (XRD). The results showed that ITO thin films have a crystalline structure with a domain that increases in size with increasing thickness. The results showed that ITO thin films maintained the crystalline. That the highest nanoparticle size was obtained at the peak angle 30.84o as 50.65 nm, 54.15 nm and 56.28 nm for the ITO samples deposited at 50 nm, 100 nm and 170 nm respectively. From the three ITO samples deposited, the ITO sample at 170 nm thickness exhibited the highest nano particle size while the lowest nanoparticle size was observed for ITO sample at 50 nm film thickness. These findings show the potential applications of ITO in optoelectronic and photovoltaic system.