Distinct ferrovalley characteristics of the Janus RuClX (X = F, Br) monolayer

杰纳斯 凝聚态物理 单层 居里温度 自旋电子学 各向异性 材料科学 磁各向异性 磁矩 铁磁性 纳米技术 磁化 物理 磁场 光学 量子力学
作者
Yubiao Ma,Yanzhao Wu,Junwei Tong,Deng Li,Xiang Yin,Lianqun Zhou,Xiaoli Han,Fubo Tian,Xianmin Zhang
出处
期刊:Nanoscale [Royal Society of Chemistry]
卷期号:15 (18): 8278-8288 被引量:33
标识
DOI:10.1039/d3nr00346a
摘要

Two-dimensional ferrovalley materials should simultaneously possess three characteristics, that is, a Curie temperature beyond atmospheric temperature, perpendicular magnetic anisotropy, and large valley polarization for potential commercial applications. In this report, we predict two ferrovalley Janus RuClX (X = F, Br) monolayers by first-principles calculations and Monte Carlo simulations. The RuClF monolayer exhibited a valley-splitting energy as large as 194 meV, perpendicular magnetic anisotropy energy of 187 μeV per f.u., and Curie temperature of 320 K. Thus, spontaneous valley polarization at room temperature will be present in the RuClF monolayer, which is nonvolatile for spintronic and valleytronic devices. Although the valley-splitting energy of the RuClBr monolayer was as high as 226 meV with magnetic anisotropy energy of 1.852 meV per f.u., the magnetic anisotropy of the RuClBr monolayer was in-plane, and its Curie temperature was only 179 K. The orbital-resolved magnetic anisotropy energy revealed that the interaction between the occupied spin-up states of dyz and the unoccupied spin-down states of dz2 dominated the out-of-plane magnetic anisotropy in the RuClF monolayer, but the in-plane magnetic anisotropy of the RuClBr monolayer was mostly contributed by the coupling of the dxy and dx2-y2 orbitals. Interestingly, the valley polarizations in the Janus RuClF and RuClBr monolayers appeared in their valence band and conduction band, respectively. Thus, two anomalous valley Hall devices are proposed using the present Janus RuClF and RuClBr monolayers with hole and electron doping, respectively. This study provides interesting and alternative candidate materials for the development of valleytronic devices.
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