材料科学
耐久性
组分(热力学)
超材料
压力传感器
固态
光电子学
计算机科学
国家(计算机科学)
计算机数据存储
电子工程
纳米技术
计算机硬件
触觉传感器
动态随机存取存储器
信息存储
电子元件
电子系统
形状记忆合金
非易失性存储器
辅助存储器
声学
机械工程
电气工程
作者
Beom Seok Kim,Jong-Gu Lee,Seongsoo Kim,Yong Whan Choi
摘要
, enabling reliable non-volatile information storage through mechanical state transitions. When applied pressure exceeds a predetermined threshold (approximately 2.6 mN), the memory component undergoes snap-through buckling, transitioning from a high-resistance "off state" to a low-resistance "on state" (≈110 Ω). Environmental durability tests demonstrate stable operation in various liquid media and temperatures up to 130 °C. A 4 × 4 integrated array successfully demonstrates spatial pressure mapping with selective memory writing above threshold pressures. This bio-inspired approach offers a promising pathway for developing intelligent tactile sensing systems for soft robotics, prosthetics, and human-machine interfaces.
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