自旋电子学
铁磁性
材料科学
凝聚态物理
离子键合
范德瓦尔斯力
插层(化学)
格子(音乐)
磁性半导体
磁铁
磁各向异性
霍尔效应
离子
电场
各向异性
晶格常数
磁电阻
磁场
带隙
矫顽力
化学物理
纳米技术
载流子
密度泛函理论
各向异性能量
电子能带结构
光电子学
电压
载流子密度
作者
Jiacheng Gao,Zhen-Xiong Shen,Xiangyan Bo,Xiaoqian Zhang,X C,Kaifei Liu,Rongshun Sun,Zhenqi Wu,Kai Gu,Shuo Wang,Jian Zhang,Yu Zhang,Yequan Chen,Lujun Wei,Ping Liu,Lixin He,Peng Li,Yong Pu,Wei Niu
摘要
Two-dimensional (2D) van der Waals (vdW) magnets have attracted increasing attention for spintronic applications owing to their intrinsic magnetic order, tunable physical properties, and easy compatibility with heterostructures. Applying these advantages in the practical application, electrical control over the magnetic and electrical properties is essential. However, techniques, such as electrostatic gating, often exhibit limited effectiveness in vdW ferromagnetic metals, as their high intrinsic carrier density screens external electric fields, necessitating impractically high voltages for effective modulation. Alternatively, we herein demonstrate that ionic intercalation provides a fundamentally different control paradigm, enabling synergistic modulation of both carrier concentration and lattice structure throughout the bulk of the vdW ferromagnet Fe3GeTe2. Intercalation of 1-alkyl-3-methylimidazolium ([C2MIm]+) ions into Fe3GeTe2 nanoflakes results in a substantial enhancement of the anomalous Hall resistance (from 0.211 to 1.656 Ω in a champion device). Concurrently, the coercive field decreases by approximately 39%, and the magnetic anisotropy energy is reduced by about 14.8%. First-principles calculations reveal that these adjustments originate from the combined effects of insertion-induced interlayer expansion, decreased carrier concentration, and, most importantly, in-plane lattice distortions. Our findings demonstrate that ionic intercalation enables synergistic tuning of carrier concentration and lattice structure in 2D magnetic materials, providing a versatile route toward next-generation spintronic devices.
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