Spin transition mechanism in a cooperatively assembled Al/Fe-doped 2D SiC based on electric field manipulation

Abstract The spin transition mechanism in an SiC monolayer doped with Al/Fe artificial monolayer was analysed using a tuneable perpendicular electric field. The spin-valve gate voltage, −0.2/0.4 eV, is asymmetrical owing to out-of-plane spin order with asymmetrical spin accumulation, which is generally distributed in a honeycomb energy structure. The spin transport process—excited, exchanging, and inverted—was observed in the density of states for the tuneable outward-propagating electric field, resulting in super spin transport between Al and Fe atoms. The Fermi velocity was used to explore the dynamic interaction of the spin and the electric field, which was exhibited by their spin texture. The role of electronic correlation effects and the electronic coupling to magnetic excitations is discussed in view of the spin texture. Our results present an active spin order dynamic scene in SiC monolayer doped with Al/Fe artificial microstructure under electric field, which sheds light on manipulating spin information, in particular, for designing spin valves for spin devices.