51‐3: Efficient InP/ZnS Quantum Dot Light‐emitting Diodes with Improved Electron Confinement

Highly delocalized electrons and parasitic emissions are serious problems in InP/ZnS quantum dot light emitting diodes. This work provided several approaches from the perspective of device design and physical mechanism to address the above problems. As a result, high efficiency InP/ZnS quantum dot light emitting diodes were achieved.