电阻率和电导率
石墨烯
电流(流体)
接触电阻
接触面积
材料科学
电接点
GSM演进的增强数据速率
热传导
金属
凝聚态物理
光电子学
纳米技术
复合材料
物理
电气工程
冶金
工程类
电信
图层(电子)
计算机科学
作者
Kosuke Nagashio,Tomonori Nishimura,Koji Kita,Akira Toriumi
摘要
The contact properties between metal and graphene were examined. The electrical measurement on a multiprobe device with different contact areas revealed that the current flow preferentially entered graphene at the edge of the contact metal. The analysis using the cross-bridge Kelvin structure (CBK) suggested that a transition from the edge conduction to area conduction occurred for a contact length shorter than the transfer length of ~1 micron. The contact resistivity for Ni was measured as ~5*10-6 Ohmcm2 using the CBK. A simple calculation suggests that a contact resistivity less than 10-9 Ohmcm2 is required for miniaturized graphene field effect transistors.
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