Surface Halogen Compensation for Robust Performance Enhancements of CsPbX3 Perovskite Quantum Dots

Abstract Understanding the subtle structure–property relationships of quantum dots (QDs) is essential for targeted modulation of optoelectronic properties, and the influences of surface defects of inorganic halide perovskite (HP) QDs are still not very clear. Here, the negative exciton trapping effects of surface halide vacancies ( V X ) on the photoluminescence quantum yield QY (PLQY) of HPQDs are determined by a detailed analysis of the optical parameters, exciton dynamics, and surface chemical states. Based on the fact that V X contribute greatly to nonradiative recombination processes, versatile in situ and postpassivation strategies are developed by constructing intact Pb–X octahedrons. High QYs for standard red CsPbBr 1 I 2 (85%), green CsPbBr 3 (96%), and blue CsPbBr 1.3 Cl 1.7 (92%) emissions are achieved. The superiorities of the reduced V X are further demonstrated by high external quantum efficiency of 0.8% and a stable emission wavelength of the blue light‐emitting diodes. This study deepens the understanding of HPQDs and demonstrates the potential for the artificial control of the optical properties of HPQDs.